Bulk and surface properties of ZnTe–ZnS system semiconductors


Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

Physicochemical studies of a new ZnTe–ZnS semiconductor system are conducted. It is found that at certain ratios of binary components, substitutional solid solutions with a cubic sphalerite structure are formed in this system. Interrelated laws governing changes in the bulk (crystal chemical, structural) and surface (acid–base) properties with varying system composition are identified. It is assumed they can be attributed to the nature of the active (acid–base) sites. The presented data, observed patterns, and an interpretation of them are used not only to confirm earlier proposed mechanisms of atomic–molecular interaction on diamond-like semiconductors, but to search for promising materials for use in highly sensitive selective sensors for environmental and medical purposes as well.

Sobre autores

I. Kirovskaya

Omsk State Technical University

Autor responsável pela correspondência
Email: kirovskaya@omgtu.ru
Rússia, Omsk, 644050

E. Mironova

Omsk State Technical University

Email: kirovskaya@omgtu.ru
Rússia, Omsk, 644050

B. Kosarev

Omsk State Technical University

Email: kirovskaya@omgtu.ru
Rússia, Omsk, 644050

P. Nor

Omsk State Technical University

Email: kirovskaya@omgtu.ru
Rússia, Omsk, 644050

T. Bukashkina

Omsk State Technical University

Email: kirovskaya@omgtu.ru
Rússia, Omsk, 644050

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML

Declaração de direitos autorais © Pleiades Publishing, Ltd., 2016