电邮这篇文章 Simulating equilibrium processes in the Ga(NO3)3–H2O–NaOH system
- 作者: Fedorova E.A.1, Bakhteev S.A.2, Maskaeva L.N.1,3, Yusupov R.A.2, Markov V.F.1,3
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隶属关系:
- Ural Federal University
- Kazan National Research Technological University
- Ural Institute of the State Fire Service, EMERCOM
- 期: 卷 90, 编号 6 (2016)
- 页面: 1274-1279
- 栏目: Colloid Chemistry and Electrochemistry
- URL: https://bakhtiniada.ru/0036-0244/article/view/168379
- DOI: https://doi.org/10.1134/S0036024416060078
- ID: 168379
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详细
Equilibrium processes in the Ga(NO3)3–H2O–NaOH system are simulated with allowance for the formation of precipitates of various compositions using experimental data from potentiometric titration and theoretical studies. The values of the instability constants are calculated along with the stoichiometric compositions of the resulting compounds. It is found that pH ranges of 1.0 to 4.3 and 12.0 to 14.0 are best for the deposition of gallium chalcogenide films.
作者简介
E. Fedorova
Ural Federal University
编辑信件的主要联系方式.
Email: ka_fed-ra@mail.ru
俄罗斯联邦, Yekaterinburg, 620002
S. Bakhteev
Kazan National Research Technological University
Email: ka_fed-ra@mail.ru
俄罗斯联邦, Kazan, 420015
L. Maskaeva
Ural Federal University; Ural Institute of the State Fire Service, EMERCOM
Email: ka_fed-ra@mail.ru
俄罗斯联邦, Yekaterinburg, 620002; Yekaterinburg, 620062
R. Yusupov
Kazan National Research Technological University
Email: ka_fed-ra@mail.ru
俄罗斯联邦, Kazan, 420015
V. Markov
Ural Federal University; Ural Institute of the State Fire Service, EMERCOM
Email: ka_fed-ra@mail.ru
俄罗斯联邦, Yekaterinburg, 620002; Yekaterinburg, 620062
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