Email this article Atomic layer deposition of zinc sulfide nanolayers on monocrystalline silicon substrates
- Authors: Ezhovskii Y.K.1, Zakharova N.V.1
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Affiliations:
- St. Petersburg State Technological Institute (Technical University)
- Issue: Vol 90, No 3 (2016)
- Pages: 647-651
- Section: Physical Chemistry of Surface Phenomena
- URL: https://bakhtiniada.ru/0036-0244/article/view/167933
- DOI: https://doi.org/10.1134/S0036024416030092
- ID: 167933
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Abstract
The formation of zinc sulfide thin films via the atomic laminating of components from a gas phase on single-crystal silicon substrates with (100), (110), and (111) orientations is examined. The characteristic temperatures of changes in the mechanism of layer formation and structural perfection are determined. The conditions for using the mechanism of layer growth are determined.
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About the authors
Yu. K. Ezhovskii
St. Petersburg State Technological Institute (Technical University)
Author for correspondence.
Email: office@technolog.edu.ru
Russian Federation, St. Petersburg, 190013
N. V. Zakharova
St. Petersburg State Technological Institute (Technical University)
Email: office@technolog.edu.ru
Russian Federation, St. Petersburg, 190013
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