Atomic layer deposition of zinc sulfide nanolayers on monocrystalline silicon substrates

Resumo

The formation of zinc sulfide thin films via the atomic laminating of components from a gas phase on single-crystal silicon substrates with (100), (110), and (111) orientations is examined. The characteristic temperatures of changes in the mechanism of layer formation and structural perfection are determined. The conditions for using the mechanism of layer growth are determined.