Molecular dynamics simulations of defect formation in thin graphite films using the density functional tight-binding method
- Authors: Shein I.R.1, Kuznetsov M.V.1, Enyashin A.N.1
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Affiliations:
- Institute of Solid State Chemistry, Ural Branch
- Issue: Vol 57, No 4 (2016)
- Pages: 808-811
- Section: Brief Communications
- URL: https://bakhtiniada.ru/0022-4766/article/view/160075
- DOI: https://doi.org/10.1134/S0022476616040260
- ID: 160075
Cite item
Abstract
Point defect formation within graphene and ultra-thin graphite films is considered by means of molecular dynamics simulations in the framework of the density functional tight-binding approach. The barrier energy for vacancy formation is estimated and two types of defect formation are revealed.
About the authors
I. R. Shein
Institute of Solid State Chemistry, Ural Branch
Email: Enyashin@ihim.uran.ru
Russian Federation, Ekaterinburg
M. V. Kuznetsov
Institute of Solid State Chemistry, Ural Branch
Email: Enyashin@ihim.uran.ru
Russian Federation, Ekaterinburg
A. N. Enyashin
Institute of Solid State Chemistry, Ural Branch
Author for correspondence.
Email: Enyashin@ihim.uran.ru
Russian Federation, Ekaterinburg
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