Molecular dynamics simulations of defect formation in thin graphite films using the density functional tight-binding method


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Abstract

Point defect formation within graphene and ultra-thin graphite films is considered by means of molecular dynamics simulations in the framework of the density functional tight-binding approach. The barrier energy for vacancy formation is estimated and two types of defect formation are revealed.

About the authors

I. R. Shein

Institute of Solid State Chemistry, Ural Branch

Email: Enyashin@ihim.uran.ru
Russian Federation, Ekaterinburg

M. V. Kuznetsov

Institute of Solid State Chemistry, Ural Branch

Email: Enyashin@ihim.uran.ru
Russian Federation, Ekaterinburg

A. N. Enyashin

Institute of Solid State Chemistry, Ural Branch

Author for correspondence.
Email: Enyashin@ihim.uran.ru
Russian Federation, Ekaterinburg

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