Molecular dynamics simulations of defect formation in thin graphite films using the density functional tight-binding method
- 作者: Shein I.R.1, Kuznetsov M.V.1, Enyashin A.N.1
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隶属关系:
- Institute of Solid State Chemistry, Ural Branch
- 期: 卷 57, 编号 4 (2016)
- 页面: 808-811
- 栏目: Brief Communications
- URL: https://bakhtiniada.ru/0022-4766/article/view/160075
- DOI: https://doi.org/10.1134/S0022476616040260
- ID: 160075
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详细
Point defect formation within graphene and ultra-thin graphite films is considered by means of molecular dynamics simulations in the framework of the density functional tight-binding approach. The barrier energy for vacancy formation is estimated and two types of defect formation are revealed.
作者简介
I. Shein
Institute of Solid State Chemistry, Ural Branch
Email: Enyashin@ihim.uran.ru
俄罗斯联邦, Ekaterinburg
M. Kuznetsov
Institute of Solid State Chemistry, Ural Branch
Email: Enyashin@ihim.uran.ru
俄罗斯联邦, Ekaterinburg
A. Enyashin
Institute of Solid State Chemistry, Ural Branch
编辑信件的主要联系方式.
Email: Enyashin@ihim.uran.ru
俄罗斯联邦, Ekaterinburg
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