Molecular dynamics simulations of defect formation in thin graphite films using the density functional tight-binding method


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Point defect formation within graphene and ultra-thin graphite films is considered by means of molecular dynamics simulations in the framework of the density functional tight-binding approach. The barrier energy for vacancy formation is estimated and two types of defect formation are revealed.

作者简介

I. Shein

Institute of Solid State Chemistry, Ural Branch

Email: Enyashin@ihim.uran.ru
俄罗斯联邦, Ekaterinburg

M. Kuznetsov

Institute of Solid State Chemistry, Ural Branch

Email: Enyashin@ihim.uran.ru
俄罗斯联邦, Ekaterinburg

A. Enyashin

Institute of Solid State Chemistry, Ural Branch

编辑信件的主要联系方式.
Email: Enyashin@ihim.uran.ru
俄罗斯联邦, Ekaterinburg

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