Molecular dynamics simulations of defect formation in thin graphite films using the density functional tight-binding method
- Авторлар: Shein I.R.1, Kuznetsov M.V.1, Enyashin A.N.1
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Мекемелер:
- Institute of Solid State Chemistry, Ural Branch
- Шығарылым: Том 57, № 4 (2016)
- Беттер: 808-811
- Бөлім: Brief Communications
- URL: https://bakhtiniada.ru/0022-4766/article/view/160075
- DOI: https://doi.org/10.1134/S0022476616040260
- ID: 160075
Дәйексөз келтіру
Аннотация
Point defect formation within graphene and ultra-thin graphite films is considered by means of molecular dynamics simulations in the framework of the density functional tight-binding approach. The barrier energy for vacancy formation is estimated and two types of defect formation are revealed.
Негізгі сөздер
Авторлар туралы
I. Shein
Institute of Solid State Chemistry, Ural Branch
Email: Enyashin@ihim.uran.ru
Ресей, Ekaterinburg
M. Kuznetsov
Institute of Solid State Chemistry, Ural Branch
Email: Enyashin@ihim.uran.ru
Ресей, Ekaterinburg
A. Enyashin
Institute of Solid State Chemistry, Ural Branch
Хат алмасуға жауапты Автор.
Email: Enyashin@ihim.uran.ru
Ресей, Ekaterinburg
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