Investigation of Silicon Diodes in the Mode of Switching by an Impact-Ionization Wave

S. V. Korotkov; Yu. V. Aristov; V. B. Voronkov; D. A. Korotkov

doi:10.1134/S0020441218030211

Investigation of Silicon Diodes in the Mode of Switching by an Impact-Ionization Wave

作者: Korotkov S.V.¹, Aristov Y.V.¹, Voronkov V.B.¹, Korotkov D.A.¹
隶属关系:
1. Ioffe Physical Technical Institute
期: 卷 61, 编号 4 (2018)
页面: 496-500
栏目: Electronics and Radio Engineering
URL: https://bakhtiniada.ru/0020-4412/article/view/160285
DOI: https://doi.org/10.1134/S0020441218030211
ID: 160285

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详细

The results of investigations of silicon diodes in the mode of switching by nanosecond pulses, which initiate an impact-ionization wave, are presented. It is shown that the switching process is significantly influenced by dislocations that are formed in the surface layers of diode structures during their manufacture.