Investigation of Silicon Diodes in the Mode of Switching by an Impact-Ionization Wave
- Авторы: Korotkov S.V.1, Aristov Y.V.1, Voronkov V.B.1, Korotkov D.A.1
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Учреждения:
- Ioffe Physical Technical Institute
- Выпуск: Том 61, № 4 (2018)
- Страницы: 496-500
- Раздел: Electronics and Radio Engineering
- URL: https://bakhtiniada.ru/0020-4412/article/view/160285
- DOI: https://doi.org/10.1134/S0020441218030211
- ID: 160285
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Аннотация
The results of investigations of silicon diodes in the mode of switching by nanosecond pulses, which initiate an impact-ionization wave, are presented. It is shown that the switching process is significantly influenced by dislocations that are formed in the surface layers of diode structures during their manufacture.
Об авторах
S. Korotkov
Ioffe Physical Technical Institute
Автор, ответственный за переписку.
Email: korotkov@mail.ioffe.ru
Россия, St. Petersburg, 194021
Yu. Aristov
Ioffe Physical Technical Institute
Email: korotkov@mail.ioffe.ru
Россия, St. Petersburg, 194021
V. Voronkov
Ioffe Physical Technical Institute
Email: korotkov@mail.ioffe.ru
Россия, St. Petersburg, 194021
D. Korotkov
Ioffe Physical Technical Institute
Email: korotkov@mail.ioffe.ru
Россия, St. Petersburg, 194021
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