Plasma-chemical synthesis of transparent dielectric Si–C–O–H films from trimethylphenoxysilane

作者: Ermakova E.N.¹, Rumyantsev Y.M.¹, Rakhlin V.I.², Kosinova M.L.¹
隶属关系:
1. Nikolaev Institute of Inorganic Chemistry, Siberian Branch
2. Irkutsk Institute of Chemistry, Siberian Branch
期: 卷 50, 编号 3 (2016)
页面: 224-227
栏目: Short Communications Plasma Chemistry
URL: https://bakhtiniada.ru/0018-1439/article/view/156977
DOI: https://doi.org/10.1134/S0018143916030085
ID: 156977

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Deposition Temperature, High Energy Chemistry, Monosilane, Ethylsilane, Plasma Chemistry Plasma

Nikolaev Institute of Inorganic Chemistry, Siberian Branch

编辑信件的主要联系方式.
Email: ermakova@niic.nsc.ru
俄罗斯联邦, pr. Akademika Lavrent’eva 3, Novosibirsk, 630090

Nikolaev Institute of Inorganic Chemistry, Siberian Branch

Email: ermakova@niic.nsc.ru
俄罗斯联邦, pr. Akademika Lavrent’eva 3, Novosibirsk, 630090

Irkutsk Institute of Chemistry, Siberian Branch

Email: ermakova@niic.nsc.ru
俄罗斯联邦, ul. Favorskogo 1, Irkutsk, 664033

Nikolaev Institute of Inorganic Chemistry, Siberian Branch

Email: ermakova@niic.nsc.ru
俄罗斯联邦, pr. Akademika Lavrent’eva 3, Novosibirsk, 630090

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