High-mobility transparent conductive layers based on indium oxide doped with tungsten
- Autores: Akhmedov A.K.1, Asvarov A.S.2, Murliev E.K.1, Shomakhov Z.V.3
-
Afiliações:
- Institute of Physics of the Dagestan Federal Research Center of RAS
- Shubnikov Institute of Crystallography, Kurchatov Complex of Crystallography and Photonics, National Research Center «Kurchatov Institute»
- Kabardino-Balkarian State University named after H.M. Berbekov
- Edição: Nº 16 (2024)
- Páginas: 565-574
- Seção: Physical and chemical foundations of nanotechnology
- URL: https://bakhtiniada.ru/2226-4442/article/view/319460
- DOI: https://doi.org/10.26456/pcascnn/2024.16.565
- EDN: https://elibrary.ru/IASLSI
- ID: 319460
Citar
Texto integral
Resumo
Increasing the conductivity of transparent conductive layers by increasing the mobility of free charge carriers is one of the most important tasks of transparent electronics, since its solution contributes not only to the reduction of heat losses in the layers, but also to the expansion of the spectrum of the radiation used towards the near infrared region. Currently, work in this area is being carried out in some routes, one of which is the search for new layer’s compositions that allow reducing the amount of impurity introduced while simultaneously increasing the efficiency of its ionization. In this paper, the influence of the oxygen content in the working gas and the deposition temperature on the morphology, microstructure, electrical, and optical characteristics of thin layers deposited by high-frequency magnetron sputtering of an ceramic target based on In2O3 with the addition of 1 wt.% WO3 was investigated. It was found that the maximum mobility (59 cm2/V٠s) and minimum specific resistance (7,8×10-4 Ohm٠cm) are achieved in layers synthesized at 300°C in the pure argon atmosphere. For comparison, layers based on a solid solution of indium and tin oxides, widely used in the formation of transparent electrodes in various optoelectronic applications, were obtained under identical conditions. It was shown that layers based on indium oxide doped with tungsten retain acceptable transparency in a wide spectral range, up to 2000 nm, and are, therefore, preferable for use in devices operating in the near infrared range, for example, in solar energy converters or night vision devices.
Palavras-chave
Sobre autores
Akhmed Akhmedov
Institute of Physics of the Dagestan Federal Research Center of RASPh. D., Leading Researcher, Institute of Physics
Abil Asvarov
Shubnikov Institute of Crystallography, Kurchatov Complex of Crystallography and Photonics, National Research Center «Kurchatov Institute»Ph. D., Senior Researcher, Shubnikov Institute of Crystallography
Eldar Murliev
Institute of Physics of the Dagestan Federal Research Center of RASJunior Researcher, Institute of Physics
Zamir Shomakhov
Kabardino-Balkarian State University named after H.M. Berbekov
Email: shozamir@yandex.ru
Ph. D., Director of the Institute of artificial intelligence and digital technologies
Bibliografia
- Шомахов, З.В. Улучшение сенсорных характеристик бинарных и тройных оксидных наносистем / З.В. Шомахов, С.С. Налимова, А.А. Рыбина и др. // Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов. - 2023. - Вып. 15. - С. 879-887. doi: 10.26456/pcascnn/2023.15.879.
- Налимова, С.С. Газочувствительные композитные наноструктуры на основе оксида цинка для детектирования паров органических растворителей / С.С. Налимова, З.В. Шомахов, К.В. Герасимова, К.Н. Пунегова, А.М. Гукетлов, Р.М. Калмыков // Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов. - 2022. - Вып. 14. - С. 678-687. doi: 10.26456/pcascnn/2022.14.678.
- Шомахов, З.В. Наноструктуры станната цинка для газовых сенсоров с высоким быстродействием / З.В. Шомахов, С.С. Налимова, Б.З. Шурдумов, А.И. Максимов, В.А. Мошников // Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов. - 2022. - Вып. 14. - С. 726-735. doi: 10.26456/pcascnn/2022.14.726.
- Minami, T. Transparent conducting oxide semiconductors for transparent electrodes / T. Minami // Semiconductors Science and Technology. - 2005. - V. 20. - № 4. - P. S35-S44. doi: 10.1088/0268-1242/20/4/004.
- Liu, H. Transparent conducting oxides for electrode applications in light emitting and absorbing devices / H. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, H. Morkoç // Superlattices and Microstructures. - 2010. - V. 48. - I. 5. - P. 458-484. doi: 10.1016/j.spmi.2010.08.011.
- Stadler, A. Transparent conducting oxides - an up-to-date overview / A. Stadler // Materials. - 2012. - V. 5. - I. 4. - P. 661-683. doi: 10.3390/ma5040661.
- Calnan, S. High mobility transparent conducting oxides for thin film solar cells / S. Calnan, A.N. Tiwari // Thin Solid Films. - 2010. - V. 518. - I. 7. - P. 1839-1849. doi: 10.1016/j.tsf.2009.09.044.
- Holman, Z.C. Infrared light management in high-efficiency silicon heterojunction and rear-passivated solar cells // Z.C. Holman, M. Filipic, A. Descoeudres et al. // Journal of Applied Physics. - 2013. - V. 113. - I. 1 - P. 013107-1-013107-13. doi: 10.1063/1.4772975.
- Bikowski, A. Analytical model of electron transport in polycrystalline, degenerately doped ZnO films / A. Bikowski, K. Ellmer // Journal of Applied Physics. - 2014. - V. 116. - I. 14. - P. 143704-1-143704-11. doi: 10.1063/1.4896839.
- Hosono, H. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application / H. Hosono // Journal of Non-Crystalline Solids. - 2003. - V. 352. - I. 9-20. - P. 851-858. doi: 10.1016/j.jnoncrysol.2006.01.073.
- Akhmedov, A.K. Transparent conductive indium zinc oxide films: temperature and oxygen dependences of the electrical and optical properties // A.K. Akhmedov, E.K. Murliev, A.S. Asvarov, A.E. Muslimov, V.M. Kanevsky // Coatings. - 2022. - V. 12. - I. 10. - Art. № 1583. - 12 p. doi: 10.3390/coatings12101583.
- Morales-Masis, M. Low-temperature high-mobility amorphous izo for silicon heterojunction solar cells / M. Morales-Masis, S.M. De Nicolas, J. Holovsky, S. De Wolf, C. Ballif // IEEE Journal of Photovoltaics. - 2015. - V. 5. - I. 5. - P. 1340-1347. doi: 10.1109/JPHOTOV.2015.2450993.
- Swallow, J.E.N. Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O3 /j.E.N. Swallow, B.A.D. Williamson, S. Sathasivam, et al. // Materials Horizons. - 2020. - V. 7. - I. 1. - P. 236-243. doi: 10.1039/C9MH01014A.
- Koida, T. High-mobility transparent conductive Zr-doped In2O3 / T. Koida, M. Kondo // Applied Physics Letters. - 2006. - V. 89. - I. 8. - P. 082104-1-082104-3. doi: 10.1063/1.2337281.
- Hashimoto, R. High mobility titanium-doped In2O3 thin films prepared by sputtering/post-annealing technique / R. Hashimoto, Y. Abe, T. Nakada //Applied Physics Express. - 2008. - V. 1. - № 1. - P. 015002-1-015002-3. doi: 10.1143/APEX.1.015002.
- Warmsingh, C. High-mobility transparent conducting Mo-doped In2O3 thin films by pulsed laser deposition / C. Warmsingh, Y. Yoshida, D.W. Readey et al. // Journal of Applied Physics. - 2004. - V. 95. - I. 7. - P. 3831-3833. doi: 10.1063/1.1646468.
- Akhmedov, A.K. A multi-position drum-type assembly for simulaneos film deposition at different temperatures in a single sputter cicle - application to ITO thin films / A.K. Akhmedov, A. Sh. Asvarov, A.E. Muslimov, V.M. Kanevsky // Coatings. - 2020. - V. 10. - I. 11. - Art. № 1076. - 9 p. doi: 10.3390/coatings10111076.
- Txintxurreta, J. Indium tin oxide thin film deposition by magnetron sputtering at room temperature for the manufacturing of efficient transparent heaters /j. Txintxurreta, E. G-Berasategui, R. Ortiz et al. // Coatings. - 2021. - V. 11. - I. 1. - Art. № 92. - 14 p. doi: 10.3390/coatings11010092.
- Kim, J.H. Rapid thermal annealed WO3 - doped In2O3 films for transparent electrodes in organic photovoltaics /j.H. Kim, Y.-H. Shin, T.-Y. Seong, S.-I. Na, H.-K. Kim // Journal of Physics D: Applied Physics. - 2012. - V. 45. - № 39. - Art. № 395104. - 6 p. doi: 10.1088/0022-3727/45/39/395104.
- Newhouse, P.F. High electron mobility W-doped In2O3 thin films by pulsed laser deposition / P.F. Newhouse, C.-H. Park, D.A. Keszler, J. Tate, P.S. Nyholm // Applied Physics Letters. - 2005. - V. 87. - I. 11. - P. 112108-1-112108-3. doi: 10.1063/1.2048829.
- Sommer, N. Field emission at grain boundaries: modeling the conductivity in highly doped polycrystalline semiconductors / N. Sommer, J. Hüpkes, U. Rau // Physical Review Applied. - 2016. - V. 5. - I. 2. - P. 024009-1-024009-22. doi: 10.1103/PhysRevApplied.5.024009.
Arquivos suplementares
