电邮这篇文章 Photovoltaic structures ITO/SiOх/n-Si of increased efficiency
- 作者: Simashkevich A.1, Sherban D.1, Caraman M.2, Rusu M.3, Bruc L.1, Curmei N.1
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隶属关系:
- Institute of Applied Physics
- State University of Moldova
- Helmholtz-Zentrum Berlin für Materialien und Energie
- 期: 卷 52, 编号 3 (2016)
- 页面: 284-288
- 栏目: Article
- URL: https://bakhtiniada.ru/1068-3755/article/view/229736
- DOI: https://doi.org/10.3103/S1068375516030108
- ID: 229736
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详细
Structures ITO/SiOх/n-Si are fabricated by pulverization of solutions of indium and tin chlorides on the (100) surface of silicon wafers with resistivity 4.5 Ω cm. The influence of the state of the Si surface on the efficiency of structures as photoelectric converters is investigated. It is shown that structures with an unetched surface of silicon wafers are the most efficient. Solar cells based on studied ITO/SiOх/n-Si structures with an inverse layer demonstrate an efficiency close to 16% in AM 1.5 conditions.
作者简介
A. Simashkevich
Institute of Applied Physics
编辑信件的主要联系方式.
Email: alexeisimashkevich@hotmail.com
摩尔多瓦共和国, Academiei str. 5, Chisinau, MD-2028
D. Sherban
Institute of Applied Physics
Email: alexeisimashkevich@hotmail.com
摩尔多瓦共和国, Academiei str. 5, Chisinau, MD-2028
M. Caraman
State University of Moldova
Email: alexeisimashkevich@hotmail.com
摩尔多瓦共和国, Alexei Mateevici str. 60, Chisinau, MD-2012
M. Rusu
Helmholtz-Zentrum Berlin für Materialien und Energie
Email: alexeisimashkevich@hotmail.com
德国, Hahn-Meitner-Platz 1, Berlin
L. Bruc
Institute of Applied Physics
Email: alexeisimashkevich@hotmail.com
摩尔多瓦共和国, Academiei str. 5, Chisinau, MD-2028
N. Curmei
Institute of Applied Physics
Email: alexeisimashkevich@hotmail.com
摩尔多瓦共和国, Academiei str. 5, Chisinau, MD-2028
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