Отправить статью по E-mail Photovoltaic structures ITO/SiOх/n-Si of increased efficiency
- Авторы: Simashkevich A.1, Sherban D.1, Caraman M.2, Rusu M.3, Bruc L.1, Curmei N.1
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Учреждения:
- Institute of Applied Physics
- State University of Moldova
- Helmholtz-Zentrum Berlin für Materialien und Energie
- Выпуск: Том 52, № 3 (2016)
- Страницы: 284-288
- Раздел: Article
- URL: https://bakhtiniada.ru/1068-3755/article/view/229736
- DOI: https://doi.org/10.3103/S1068375516030108
- ID: 229736
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Аннотация
Structures ITO/SiOх/n-Si are fabricated by pulverization of solutions of indium and tin chlorides on the (100) surface of silicon wafers with resistivity 4.5 Ω cm. The influence of the state of the Si surface on the efficiency of structures as photoelectric converters is investigated. It is shown that structures with an unetched surface of silicon wafers are the most efficient. Solar cells based on studied ITO/SiOх/n-Si structures with an inverse layer demonstrate an efficiency close to 16% in AM 1.5 conditions.
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Об авторах
A. Simashkevich
Institute of Applied Physics
Автор, ответственный за переписку.
Email: alexeisimashkevich@hotmail.com
Молдавия, Academiei str. 5, Chisinau, MD-2028
D. Sherban
Institute of Applied Physics
Email: alexeisimashkevich@hotmail.com
Молдавия, Academiei str. 5, Chisinau, MD-2028
M. Caraman
State University of Moldova
Email: alexeisimashkevich@hotmail.com
Молдавия, Alexei Mateevici str. 60, Chisinau, MD-2012
M. Rusu
Helmholtz-Zentrum Berlin für Materialien und Energie
Email: alexeisimashkevich@hotmail.com
Германия, Hahn-Meitner-Platz 1, Berlin
L. Bruc
Institute of Applied Physics
Email: alexeisimashkevich@hotmail.com
Молдавия, Academiei str. 5, Chisinau, MD-2028
N. Curmei
Institute of Applied Physics
Email: alexeisimashkevich@hotmail.com
Молдавия, Academiei str. 5, Chisinau, MD-2028
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