Contribution of Mechanical Stresses to the Surface Relief Formation Under Laser Irradiation of Semiconductors

V. G. Sredin; A. V. Voitsekhovskii; M. V. Sakharov; N. Kh. Talipov

doi:10.1007/s11182-019-01814-9

Contribution of Mechanical Stresses to the Surface Relief Formation Under Laser Irradiation of Semiconductors

作者: Sredin V.G.¹, Voitsekhovskii A.V.², Sakharov M.V.¹, Talipov N.K.¹
隶属关系:
1. Peter the Great Military Academy of Strategic Missile Forces
2. National Research Tomsk State University
期: 卷 62, 编号 6 (2019)
页面: 1062-1065
栏目: Article
URL: https://bakhtiniada.ru/1064-8887/article/view/241974
DOI: https://doi.org/10.1007/s11182-019-01814-9
ID: 241974

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The paper considers the effect of elastic stresses arising under pulsed laser irradiation of epitaxial layers of Cd_xHg_1–xTe solid solutions on the formation of a periodic surface relief as a result of recrystallization of material melted by radiation.