Radiation Resistance of (HgSe) 3 (In 2 Se 3 )&lt;Mn&gt;

I. P. Koziarskyi; V. T. Maslyuk; P. D. Maryanchuk; E. V. Maistruk; D. P. Koziarskyi; I. G. Megela; G. V. Lashkarev

doi:10.1007/s11182-018-1516-1

Radiation Resistance of (HgSe)₃(In₂Se₃)<Mn>

作者: Koziarskyi I.P.¹, Maslyuk V.T.², Maryanchuk P.D.¹, Maistruk E.V.¹, Koziarskyi D.P.¹, Megela I.G.², Lashkarev G.V.³
隶属关系:
1. Yuriy Fedkovych Chernivtsi National University
2. Institute of Electron Physics, National Academy of Sciences of Ukraine
3. Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine
期: 卷 61, 编号 7 (2018)
页面: 1189-1193
栏目: Physics of Semiconductors and Dielectrics
URL: https://bakhtiniada.ru/1064-8887/article/view/240726
DOI: https://doi.org/10.1007/s11182-018-1516-1
ID: 240726

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We present the results of studies of the effect of electron irradiation on the electrophysical parameters of (HgSe)₃(In₂Se₃) crystals, which are semimagnetic semiconductors with stoichiometric vacancies. It is shown that irradiation of (HgSe)₃(In₂Se₃) with high-energy electrons (E_e = 10 MeV, dose D = 10¹⁶ cm^–2) has little effect on the electrophysical and magnetic properties, which indicates their high radiation resistance.