Radiation Resistance of (HgSe) 3 (In 2 Se 3 )&lt;Mn&gt;

I. P. Koziarskyi; V. T. Maslyuk; P. D. Maryanchuk; E. V. Maistruk; D. P. Koziarskyi; I. G. Megela; G. V. Lashkarev

doi:10.1007/s11182-018-1516-1

Radiation Resistance of (HgSe)₃(In₂Se₃)<Mn>

Autores: Koziarskyi I.P.¹, Maslyuk V.T.², Maryanchuk P.D.¹, Maistruk E.V.¹, Koziarskyi D.P.¹, Megela I.G.², Lashkarev G.V.³
Afiliações:
1. Yuriy Fedkovych Chernivtsi National University
2. Institute of Electron Physics, National Academy of Sciences of Ukraine
3. Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine
Edição: Volume 61, Nº 7 (2018)
Páginas: 1189-1193
Seção: Physics of Semiconductors and Dielectrics
URL: https://bakhtiniada.ru/1064-8887/article/view/240726
DOI: https://doi.org/10.1007/s11182-018-1516-1
ID: 240726

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We present the results of studies of the effect of electron irradiation on the electrophysical parameters of (HgSe)₃(In₂Se₃) crystals, which are semimagnetic semiconductors with stoichiometric vacancies. It is shown that irradiation of (HgSe)₃(In₂Se₃) with high-energy electrons (E_e = 10 MeV, dose D = 10¹⁶ cm^–2) has little effect on the electrophysical and magnetic properties, which indicates their high radiation resistance.