Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd  x  Hg 1– x  Te Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates

V. S. Varavin; V. V. Vasil’ev; S. A. Dvoretskii; N. N. Mikhailov; M. V. Yakushev; G. Yu. Sidorov; A. V. Voitsekhovskii; S. N. Nesmelov; S. M. Dzyadukh

doi:10.1007/s11182-017-1083-x

Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd_xHg_1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates

作者: Varavin V.S.¹, Vasil’ev V.V.¹, Dvoretskii S.A.²^,1, Mikhailov N.N.¹, Yakushev M.V.¹, Sidorov G.Y.¹, Voitsekhovskii A.V.²^,3, Nesmelov S.N.²^,3, Dzyadukh S.M.²^,3
隶属关系:
1. A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
2. National Research Tomsk State University
3. V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
期: 卷 60, 编号 2 (2017)
页面: 360-370
栏目: Article
URL: https://bakhtiniada.ru/1064-8887/article/view/238015
DOI: https://doi.org/10.1007/s11182-017-1083-x
ID: 238015

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In a temperature range of 9–200 K, temperature dependences of the differential resistance of space-charge region in the strong inversion mode are experimentally studied for MIS structures based on Cd_xHg_1–xTe (x = 0.22–0.40) grown by molecular-beam epitaxy. The effect of various parameters of structures: the working layer composition, the type of a substrate, the type of insulator coating, and the presence of a near-surface graded-gap layer on the value of the product of differential resistance by the area is studied. It is shown that the values of the product R_SCRA for MIS structures based on n-CdHgTe grown on a Si(013) substrate are smaller than those for structures based on the material grown on a GaAs(013) substrate. The values of the product R_SCRA for MIS structures based on p-CdHgTe grown on a Si(013) substrate are comparable with the value of the analogous parameter for MIS structures based on p-CdHgTe grown on a GaAs(013) substrate.

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MIS structure, CdHgTe, molecular beam epitaxy, alternative substrates, dark current, differential resistance, space-charge region, admittance, graded-gap layer, Si, GaAs

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Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd_xHg_1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates

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V. Varavin

V. Vasil’ev

S. Dvoretskii

N. Mikhailov

M. Yakushev

G. Sidorov

A. Voitsekhovskii

S. Nesmelov

S. Dzyadukh

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Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on CdxHg1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates

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Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd_xHg_1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates