Phase Transformations in the Film-Substrate System Irradiated with e-beam
- Авторы: Ivanov Y.F.1,2, Klopotov A.A.2,3, Potekaev A.I.2,4, Laskovnev A.P.5, Teresov A.D.1,2, Tsvetkov N.A.3, Petrikova E.A.1,2, Krysina O.V.1,2, Ivanova O.V.3, Shugurov V.V.1, Shegidevich A.A.5, Kulagina V.V.6,4
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Учреждения:
- High Current Electronics Institute of the Siberian Branch of the Russian Academy of Sciences
- National Research Tomsk State University
- Tomsk State Architecture and Building University
- V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
- Physical Technical Institute of the National Academy of Sciences
- Siberian State Medical University
- Выпуск: Том 60, № 1 (2017)
- Страницы: 175-180
- Раздел: Article
- URL: https://bakhtiniada.ru/1064-8887/article/view/237907
- DOI: https://doi.org/10.1007/s11182-017-1057-z
- ID: 237907
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Аннотация
It is reported that irradiation of the film/substrate system (Zr–Ti–Cu)/(A7) with a high-intensity electron beam is followed by the formation of a multi-phase state, whose microhardness is approximately by a factor of 4.5 higher than that of the technical grade aluminum А7, which is due to the substrate structure grain refinement and precipitation of zirconium aluminides in the surface layer.
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Об авторах
Yu. Ivanov
High Current Electronics Institute of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University
Автор, ответственный за переписку.
Email: yufi55@mail.ru
Россия, Tomsk; Tomsk
A. Klopotov
National Research Tomsk State University; Tomsk State Architecture and Building University
Email: yufi55@mail.ru
Россия, Tomsk; Tomsk
A. Potekaev
National Research Tomsk State University; V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
Email: yufi55@mail.ru
Россия, Tomsk; Tomsk
A. Laskovnev
Physical Technical Institute of the National Academy of Sciences
Email: yufi55@mail.ru
Белоруссия, Minsk
A. Teresov
High Current Electronics Institute of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University
Email: yufi55@mail.ru
Россия, Tomsk; Tomsk
N. Tsvetkov
Tomsk State Architecture and Building University
Email: yufi55@mail.ru
Россия, Tomsk
E. Petrikova
High Current Electronics Institute of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University
Email: yufi55@mail.ru
Россия, Tomsk; Tomsk
O. Krysina
High Current Electronics Institute of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University
Email: yufi55@mail.ru
Россия, Tomsk; Tomsk
O. Ivanova
Tomsk State Architecture and Building University
Email: yufi55@mail.ru
Россия, Tomsk
V. Shugurov
High Current Electronics Institute of the Siberian Branch of the Russian Academy of Sciences
Email: yufi55@mail.ru
Россия, Tomsk
A. Shegidevich
Physical Technical Institute of the National Academy of Sciences
Email: yufi55@mail.ru
Белоруссия, Minsk
V. Kulagina
Siberian State Medical University; V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
Email: yufi55@mail.ru
Россия, Tomsk; Tomsk
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