Enviar artigo por via de e-mail Phase Transformations in the Film-Substrate System Irradiated with e-beam
- Autores: Ivanov Y.F.1,2, Klopotov A.A.2,3, Potekaev A.I.2,4, Laskovnev A.P.5, Teresov A.D.1,2, Tsvetkov N.A.3, Petrikova E.A.1,2, Krysina O.V.1,2, Ivanova O.V.3, Shugurov V.V.1, Shegidevich A.A.5, Kulagina V.V.6,4
-
Afiliações:
- High Current Electronics Institute of the Siberian Branch of the Russian Academy of Sciences
- National Research Tomsk State University
- Tomsk State Architecture and Building University
- V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
- Physical Technical Institute of the National Academy of Sciences
- Siberian State Medical University
- Edição: Volume 60, Nº 1 (2017)
- Páginas: 175-180
- Seção: Article
- URL: https://bakhtiniada.ru/1064-8887/article/view/237907
- DOI: https://doi.org/10.1007/s11182-017-1057-z
- ID: 237907
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
It is reported that irradiation of the film/substrate system (Zr–Ti–Cu)/(A7) with a high-intensity electron beam is followed by the formation of a multi-phase state, whose microhardness is approximately by a factor of 4.5 higher than that of the technical grade aluminum А7, which is due to the substrate structure grain refinement and precipitation of zirconium aluminides in the surface layer.
Palavras-chave
Sobre autores
Yu. Ivanov
High Current Electronics Institute of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University
Autor responsável pela correspondência
Email: yufi55@mail.ru
Rússia, Tomsk; Tomsk
A. Klopotov
National Research Tomsk State University; Tomsk State Architecture and Building University
Email: yufi55@mail.ru
Rússia, Tomsk; Tomsk
A. Potekaev
National Research Tomsk State University; V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
Email: yufi55@mail.ru
Rússia, Tomsk; Tomsk
A. Laskovnev
Physical Technical Institute of the National Academy of Sciences
Email: yufi55@mail.ru
Belarus, Minsk
A. Teresov
High Current Electronics Institute of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University
Email: yufi55@mail.ru
Rússia, Tomsk; Tomsk
N. Tsvetkov
Tomsk State Architecture and Building University
Email: yufi55@mail.ru
Rússia, Tomsk
E. Petrikova
High Current Electronics Institute of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University
Email: yufi55@mail.ru
Rússia, Tomsk; Tomsk
O. Krysina
High Current Electronics Institute of the Siberian Branch of the Russian Academy of Sciences; National Research Tomsk State University
Email: yufi55@mail.ru
Rússia, Tomsk; Tomsk
O. Ivanova
Tomsk State Architecture and Building University
Email: yufi55@mail.ru
Rússia, Tomsk
V. Shugurov
High Current Electronics Institute of the Siberian Branch of the Russian Academy of Sciences
Email: yufi55@mail.ru
Rússia, Tomsk
A. Shegidevich
Physical Technical Institute of the National Academy of Sciences
Email: yufi55@mail.ru
Belarus, Minsk
V. Kulagina
Siberian State Medical University; V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
Email: yufi55@mail.ru
Rússia, Tomsk; Tomsk
Arquivos suplementares
