Enviar artigo por via de e-mail Electrophysical and Physical-Chemical Properties of Ohmic Contacts to III-N Compounds
- Autores: Brudnyi V.N.1, Vilisova M.D.1, Velikovskii L.É.1, Sim P.Е.1, Brudnyi P.A.1
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Afiliações:
- National Research Tomsk State University
- Edição: Volume 61, Nº 8 (2018)
- Páginas: 1450-1456
- Seção: Article
- URL: https://bakhtiniada.ru/1064-8887/article/view/240867
- DOI: https://doi.org/10.1007/s11182-018-1555-7
- ID: 240867
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Resumo
Experimental data on studying ohmic contacts based on single-layer and multilayer metallizations on GaN and (In, Al, Ga)N solid solutions are analyzed. The contact resistance of the Ti/Al/Mo/Au and Ti/Al/Mo/W/Au metallizations on undoped GaN is studied. The dependences of the contact resistance on the GaN surface treatment before the metallization and on the metallization annealing regimes are investigated.
Sobre autores
V. Brudnyi
National Research Tomsk State University
Autor responsável pela correspondência
Email: brudnyi@mail.tsu.ru
Rússia, Tomsk
M. Vilisova
National Research Tomsk State University
Email: brudnyi@mail.tsu.ru
Rússia, Tomsk
L. Velikovskii
National Research Tomsk State University
Email: brudnyi@mail.tsu.ru
Rússia, Tomsk
P. Sim
National Research Tomsk State University
Email: brudnyi@mail.tsu.ru
Rússia, Tomsk
P. Brudnyi
National Research Tomsk State University
Email: brudnyi@mail.tsu.ru
Rússia, Tomsk
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