Electrophysical and Physical-Chemical Properties of Ohmic Contacts to III-N Compounds

V. N. Brudnyi; M. D. Vilisova; L. É. Velikovskii; P. Е. Sim; P. A. Brudnyi

doi:10.1007/s11182-018-1555-7

Electrophysical and Physical-Chemical Properties of Ohmic Contacts to III-N Compounds

Authors: Brudnyi V.N.¹, Vilisova M.D.¹, Velikovskii L.É.¹, Sim P.Е.¹, Brudnyi P.A.¹
Affiliations:
1. National Research Tomsk State University
Issue: Vol 61, No 8 (2018)
Pages: 1450-1456
Section: Article
URL: https://bakhtiniada.ru/1064-8887/article/view/240867
DOI: https://doi.org/10.1007/s11182-018-1555-7
ID: 240867

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Abstract

Experimental data on studying ohmic contacts based on single-layer and multilayer metallizations on GaN and (In, Al, Ga)N solid solutions are analyzed. The contact resistance of the Ti/Al/Mo/Au and Ti/Al/Mo/W/Au metallizations on undoped GaN is studied. The dependences of the contact resistance on the GaN surface treatment before the metallization and on the metallization annealing regimes are investigated.