Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering

T. Z. Lygdenova; V. M. Kalygina; V. A. Novikov; I. A. Prudaev; O. P. Tolbanov; A. V. Tyazhev

doi:10.1007/s11182-018-1302-0

Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering

Autores: Lygdenova T.Z.¹, Kalygina V.M.¹, Novikov V.A.¹, Prudaev I.A.¹, Tolbanov O.P.¹, Tyazhev A.V.¹
Afiliações:
1. National Research Tomsk State University
Edição: Volume 60, Nº 11 (2018)
Páginas: 1911-1916
Seção: Article
URL: https://bakhtiniada.ru/1064-8887/article/view/239609
DOI: https://doi.org/10.1007/s11182-018-1302-0
ID: 239609

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Resumo

The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290–350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local level Е_t located 0.95 eV below the conduction band bottom.