Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd  x  Hg 1– x  Te Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates

V. S. Varavin; V. V. Vasil’ev; S. A. Dvoretskii; N. N. Mikhailov; M. V. Yakushev; G. Yu. Sidorov; A. V. Voitsekhovskii; S. N. Nesmelov; S. M. Dzyadukh

doi:10.1007/s11182-017-1083-x

Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd_xHg_1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates

Авторлар: Varavin V.S.¹, Vasil’ev V.V.¹, Dvoretskii S.A.²^,1, Mikhailov N.N.¹, Yakushev M.V.¹, Sidorov G.Y.¹, Voitsekhovskii A.V.²^,3, Nesmelov S.N.²^,3, Dzyadukh S.M.²^,3
Мекемелер:
1. A. V. Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
2. National Research Tomsk State University
3. V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University
Шығарылым: Том 60, № 2 (2017)
Беттер: 360-370
Бөлім: Article
URL: https://bakhtiniada.ru/1064-8887/article/view/238015
DOI: https://doi.org/10.1007/s11182-017-1083-x
ID: 238015

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In a temperature range of 9–200 K, temperature dependences of the differential resistance of space-charge region in the strong inversion mode are experimentally studied for MIS structures based on Cd_xHg_1–xTe (x = 0.22–0.40) grown by molecular-beam epitaxy. The effect of various parameters of structures: the working layer composition, the type of a substrate, the type of insulator coating, and the presence of a near-surface graded-gap layer on the value of the product of differential resistance by the area is studied. It is shown that the values of the product R_SCRA for MIS structures based on n-CdHgTe grown on a Si(013) substrate are smaller than those for structures based on the material grown on a GaAs(013) substrate. The values of the product R_SCRA for MIS structures based on p-CdHgTe grown on a Si(013) substrate are comparable with the value of the analogous parameter for MIS structures based on p-CdHgTe grown on a GaAs(013) substrate.

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MIS structure, CdHgTe, molecular beam epitaxy, alternative substrates, dark current, differential resistance, space-charge region, admittance, graded-gap layer, Si, GaAs

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Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd_xHg_1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates

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Аннотация

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V. Varavin

V. Vasil’ev

S. Dvoretskii

N. Mikhailov

M. Yakushev

G. Sidorov

A. Voitsekhovskii

S. Nesmelov

S. Dzyadukh

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Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on CdxHg1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates

Толық мәтін

Аннотация

Негізгі сөздер

Авторлар туралы

Қосымша файлдар

Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd_xHg_1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates