Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-Hg0.78Cd0.22Te Grown by Molecular Beam Epitaxy

Abstract

Peculiarities of determining the concentration and distribution profile of dopant in the near-surface layer of a semiconductor by measuring the admittance of MIS structures based on p-Hg0.78Cd0.22Te grown by molecular beam epitaxy are studied. A technique is proposed for the determining the concentration of dopant based on the measurement of the admittance of MIS structures in the frequency range of 50 kHz – 1 MHz. It is shown that in this frequency range, the capacitance-voltage characteristics of MIS structures based on p-Hg_0.78Cd_0.22Te with a near-surface graded-gap layer have a high- frequency behavior with respect to the recharge time of surface states located near the Fermi level of intrinsic semiconductor. The distribution profile of dopant in the nearsurface layer of the semiconductor is calculated. It is shown that in p-Hg_0.78Cd_0.22Te with a near-surface graded-gap layer, the dopant concentration has the lowest value near the interface with the insulator.