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Vol 59, No 2 (2016)
Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-Hg0.78Cd0.22Te Grown by Molecular Beam Epitaxy
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M.
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(Eng)
Vol 62, No 6 (2019)
Current-Voltage Characteristics of nBn Structures Based on Mercury Cadmium Telluride Epitaxial Films
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M., Dvoretsky S.A., Mikhailov N.N., Sidorov G.Y.
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(Eng)
Vol 60, No 11 (2018)
Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator
Dzyadukh S.M., Voitsekhovskii A.V., Nesmelov S.N., Sidorov G.Y., Varavin V.S., Vasil’ev V.V., Dvoretsky S.A., Mikhailov N.N., Yakushev M.V.
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(Eng)
Vol 60, No 1 (2017)
Electron Concentration in the Near-Surface Graded-Gap Layer of MBE n-Hg1–xCdxTe (x = 0.22–0.40) Determined from the Capacitance Measurements of MIS-Structures
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M., Grigor’ev D.V., Lyapunov D.V.
PDF
(Eng)
Vol 59, No 7 (2016)
Temperature and Field Dependences of Parameters of the Equivalent Circuit Elements of MIS Structures Based on MBE n-Hg0.775Cd0.225Te in the Strong Inversion Mode
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M.
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(Eng)
Vol 59, No 3 (2016)
Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy
Świątek Z., Ozga P., Izhnin I.I., Fitsych E.I., Voitsekhovskii A.V., Korotaev A.G., Mynbaev K.D., Varavin V.S., Dvoretsky S.A., Mikhailov N.N., Yakushev M.V., Bonchyk A.Y., Savytsky H.V.
PDF
(Eng)
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