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Admittance Characteristics of nBn Structures Based on Hgcdte Grown by Molecular Beam Epitaxy
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M., Dvoretsky S.A., Mikhailov N.N., Sidorov G.Y.
Electrophysical Characteristics of the Pentacene-based MIS Structures with a SiO2 Insulator
Novikov V.A., Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M., Kopylova T.N., Degtyarenko K.M., Chernikov E.V., Kalygina V.M.
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