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Vol 62, No 5 (2019)
Admittance Characteristics of nBn Structures Based on Hgcdte Grown by Molecular Beam Epitaxy
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M., Dvoretsky S.A., Mikhailov N.N., Sidorov G.Y.
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(Eng)
Vol 60, No 1 (2017)
Electron Concentration in the Near-Surface Graded-Gap Layer of MBE n-Hg1–xCdxTe (x = 0.22–0.40) Determined from the Capacitance Measurements of MIS-Structures
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M., Grigor’ev D.V., Lyapunov D.V.
PDF
(Eng)
Vol 61, No 7 (2018)
Studying the Formation of Si (100) Stepped Surface in Molecular-Beam Epitaxy
Esin M.Y., Hervieu Y.Y., Timofeev V.A., Nikiforov A.I.
PDF
(Eng)
Vol 59, No 8 (2016)
Step Flow Model of Radial Growth and Shape Evolution of Semiconductor Nanowires
Filimonov S.N., Hervieu Y.Y.
PDF
(Eng)
Vol 61, No 7 (2018)
Parameters of Photo-Sensitive Structures Based on Ge/Si Nanogeterostructures
Douhan R.M., Kokhanenko A.P., Lozovoy K.A.
PDF
(Eng)
Vol 59, No 7 (2016)
Temperature and Field Dependences of Parameters of the Equivalent Circuit Elements of MIS Structures Based on MBE n-Hg0.775Cd0.225Te in the Strong Inversion Mode
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M.
PDF
(Eng)
Vol 60, No 11 (2018)
Kinetic Model of the Initial Stage of the Nanowire Growth
Filimonov S.N., Hervieu Y.Y.
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(Eng)
Vol 59, No 2 (2016)
Peculiarities of Determining the Dopant Concentration in the Near-Surface Layer of a Semiconductor by Measuring the Admittance of MIS Structures Based on P-Hg0.78Cd0.22Te Grown by Molecular Beam Epitaxy
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M.
PDF
(Eng)
Vol 60, No 11 (2018)
Comparison of the Growth Processes of Germanium Quantum Dots on the Si(100) and Si(111) Surfaces
Kokhanenko A.P., Lozovoy K.A., Voitsekhovskii A.V.
PDF
(Eng)
Vol 58, No 11 (2016)
Formation of Organic Thin Films of Nonlinear Optical Materials by Molecular Layer Epitaxy
Burtman V., Kopylova T.N., Van Der Boom M., Gadirov R.M., Tel’minov E.N., Nikonov S.Y., Nikonova E.N.
PDF
(Eng)
Vol 60, No 11 (2018)
Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands
Yesin M.Y., Nikiforov A.I., Timofeev V.A., Mashanov V.I., Tuktamyshev A.R., Loshkarev I.D., Pchelyakov O.P.
PDF
(Eng)
Vol 60, No 11 (2018)
Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator
Dzyadukh S.M., Voitsekhovskii A.V., Nesmelov S.N., Sidorov G.Y., Varavin V.S., Vasil’ev V.V., Dvoretsky S.A., Mikhailov N.N., Yakushev M.V.
PDF
(Eng)
Vol 62, No 6 (2019)
Current-Voltage Characteristics of nBn Structures Based on Mercury Cadmium Telluride Epitaxial Films
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M., Dvoretsky S.A., Mikhailov N.N., Sidorov G.Y.
PDF
(Eng)
Vol 60, No 2 (2017)
Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on CdxHg1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates
Varavin V.S., Vasil’ev V.V., Dvoretskii S.A., Mikhailov N.N., Yakushev M.V., Sidorov G.Y., Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M.
PDF
(Eng)
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