Quasi-Two-Dimensional Electron–Hole Liquid in Shallow SiGe/Si Quantum Wells

A. A. Vasilchenko; G. F. Kopytov; V. S. Krivobok

doi:10.1007/s11182-018-1386-6

Quasi-Two-Dimensional Electron–Hole Liquid in Shallow SiGe/Si Quantum Wells

Authors: Vasilchenko A.A.¹^,2, Kopytov G.F.², Krivobok V.S.³^,4
Affiliations:
1. Kuban State Technological University
2. Kuban State University
3. P. N. Lebedev Physical Institute
4. National Research Nuclear University “MEPhI”
Issue: Vol 61, No 2 (2018)
Pages: 205-210
Section: Physics of Semiconductors and Dielectrics
URL: https://bakhtiniada.ru/1064-8887/article/view/240133
DOI: https://doi.org/10.1007/s11182-018-1386-6
ID: 240133

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Abstract

An analytical expression is obtained for the energy of a quasi-two-dimensional electron-hole liquid (EHL) in shallow quantum wells. It is shown that in the Si/Si_1–xGe_x/Si structures with small x, the EHL contains light and heavy holes. With increasing x, the transition of EHL to a state with heavy holes occurs, and the equilibrium density of electron-hole pairs strongly decreases. The effect of an external electric field on the EHL properties is studied.