Quasi-Two-Dimensional Electron–Hole Liquid in Shallow SiGe/Si Quantum Wells

A. A. Vasilchenko; G. F. Kopytov; V. S. Krivobok

doi:10.1007/s11182-018-1386-6

Quasi-Two-Dimensional Electron–Hole Liquid in Shallow SiGe/Si Quantum Wells

作者: Vasilchenko A.A.¹^,2, Kopytov G.F.², Krivobok V.S.³^,4
隶属关系:
1. Kuban State Technological University
2. Kuban State University
3. P. N. Lebedev Physical Institute
4. National Research Nuclear University “MEPhI”
期: 卷 61, 编号 2 (2018)
页面: 205-210
栏目: Physics of Semiconductors and Dielectrics
URL: https://bakhtiniada.ru/1064-8887/article/view/240133
DOI: https://doi.org/10.1007/s11182-018-1386-6
ID: 240133

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
补充文件
统计

详细

An analytical expression is obtained for the energy of a quasi-two-dimensional electron-hole liquid (EHL) in shallow quantum wells. It is shown that in the Si/Si_1–xGe_x/Si structures with small x, the EHL contains light and heavy holes. With increasing x, the transition of EHL to a state with heavy holes occurs, and the equilibrium density of electron-hole pairs strongly decreases. The effect of an external electric field on the EHL properties is studied.