Crystallization Kinetics of Amorphous AgInS2 Film
- Authors: Kerimova N.K.1, Mamedova A.C.2
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Affiliations:
- Azerbaijan State University of Economics
- The Institute of Physics ANAS
- Issue: Vol 60, No 12 (2018)
- Pages: 2144-2148
- Section: Article
- URL: https://bakhtiniada.ru/1064-8887/article/view/239842
- DOI: https://doi.org/10.1007/s11182-018-1338-1
- ID: 239842
Cite item
Abstract
The paper deals with crystallization kinetics of amorphous AgInS2 film. The dependence between lnln(V0 / (V0 –Vt) and lnt is obtained for 423, 448 and 468 K temperatures, which shows a linear arrangement of points for these temperatures, i.e. 2.80 2.87 and 2.93, respectively. The approximate equality of these values indicates that during AgInS2 film crystallization, a two-dimensional crystal growth occurs and the reaction rate constant equals (1/3π) \( {\eta}_n{\eta}_c^2. \)
Keywords
About the authors
N. K. Kerimova
Azerbaijan State University of Economics
Author for correspondence.
Email: kerimova-nurlana@mail.ru
Azerbaijan, Baku
A. Ch. Mamedova
The Institute of Physics ANAS
Email: kerimova-nurlana@mail.ru
Azerbaijan, Baku
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