Crystallization Kinetics of Amorphous AgInS2 Film


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Abstract

The paper deals with crystallization kinetics of amorphous AgInS2 film. The dependence between lnln(V0 / (V0 –Vt) and lnt is obtained for 423, 448 and 468 K temperatures, which shows a linear arrangement of points for these temperatures, i.e. 2.80 2.87 and 2.93, respectively. The approximate equality of these values indicates that during AgInS2 film crystallization, a two-dimensional crystal growth occurs and the reaction rate constant equals (1/3π) \( {\eta}_n{\eta}_c^2. \)

About the authors

N. K. Kerimova

Azerbaijan State University of Economics

Author for correspondence.
Email: kerimova-nurlana@mail.ru
Azerbaijan, Baku

A. Ch. Mamedova

The Institute of Physics ANAS

Email: kerimova-nurlana@mail.ru
Azerbaijan, Baku

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