Crystallization Kinetics of Amorphous AgInS 2  Film

N. K. Kerimova; A. Ch. Mamedova

doi:10.1007/s11182-018-1338-1

Crystallization Kinetics of Amorphous AgInS₂ Film

Authors: Kerimova N.K.¹, Mamedova A.C.²
Affiliations:
1. Azerbaijan State University of Economics
2. The Institute of Physics ANAS
Issue: Vol 60, No 12 (2018)
Pages: 2144-2148
Section: Article
URL: https://bakhtiniada.ru/1064-8887/article/view/239842
DOI: https://doi.org/10.1007/s11182-018-1338-1
ID: 239842

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Abstract

The paper deals with crystallization kinetics of amorphous AgInS₂ film. The dependence between lnln(V₀ / (V₀ –V_t) and lnt is obtained for 423, 448 and 468 K temperatures, which shows a linear arrangement of points for these temperatures, i.e. 2.80 2.87 and 2.93, respectively. The approximate equality of these values indicates that during AgInS₂ film crystallization, a two-dimensional crystal growth occurs and the reaction rate constant equals (1/3π) \( {\eta}_n{\eta}_c^2. \)