Crystallization Kinetics of Amorphous AgInS2 Film

Аннотация

The paper deals with crystallization kinetics of amorphous AgInS₂ film. The dependence between lnln(V₀ / (V₀ –V_t) and lnt is obtained for 423, 448 and 468 K temperatures, which shows a linear arrangement of points for these temperatures, i.e. 2.80 2.87 and 2.93, respectively. The approximate equality of these values indicates that during AgInS₂ film crystallization, a two-dimensional crystal growth occurs and the reaction rate constant equals (1/3π) \( {\eta}_n{\eta}_c^2. \)