The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas


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AlGaN/AlN/GaN and InAlN/AlN/GaN structures with 2D electron gas have been grown on sapphire substrates by metal-organic vapor-phase epitaxy. The suppression of the parasitic conductivity of buffer GaN layers was provided either by intentionally raising the density of edge dislocations or by doping with iron (GaN:Fe). It was shown that using GaN buffer layers with a better crystal perfection and more planar surface results in the electron mobility in the 2D channel for carriers becoming 1.2–1.5 times higher.

作者简介

V. Lundin

Ioffe Physical Technical Institute

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Email: lundin.vpegroup@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

A. Sakharov

Ioffe Physical Technical Institute

Email: lundin.vpegroup@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

E. Zavarin

Ioffe Physical Technical Institute

Email: lundin.vpegroup@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

D. Zakgeim

Ioffe Physical Technical Institute

Email: lundin.vpegroup@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

A. Nikolaev

Ioffe Physical Technical Institute

Email: lundin.vpegroup@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

P. Brunkov

Ioffe Physical Technical Institute

Email: lundin.vpegroup@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

M. Yagovkina

Ioffe Physical Technical Institute

Email: lundin.vpegroup@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

A. Tsatsul’nikov

Submicron Heterostructures for Microelectronics Research and Engineering Center

Email: lundin.vpegroup@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

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