The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas
- 作者: Lundin V.V.1, Sakharov A.V.1, Zavarin E.E.1, Zakgeim D.A.1, Nikolaev A.E.1, Brunkov P.N.1, Yagovkina M.A.1, Tsatsul’nikov A.F.2
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隶属关系:
- Ioffe Physical Technical Institute
- Submicron Heterostructures for Microelectronics Research and Engineering Center
- 期: 卷 44, 编号 7 (2018)
- 页面: 577-580
- 栏目: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/207775
- DOI: https://doi.org/10.1134/S1063785018070106
- ID: 207775
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详细
AlGaN/AlN/GaN and InAlN/AlN/GaN structures with 2D electron gas have been grown on sapphire substrates by metal-organic vapor-phase epitaxy. The suppression of the parasitic conductivity of buffer GaN layers was provided either by intentionally raising the density of edge dislocations or by doping with iron (GaN:Fe). It was shown that using GaN buffer layers with a better crystal perfection and more planar surface results in the electron mobility in the 2D channel for carriers becoming 1.2–1.5 times higher.
作者简介
V. Lundin
Ioffe Physical Technical Institute
编辑信件的主要联系方式.
Email: lundin.vpegroup@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Sakharov
Ioffe Physical Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
E. Zavarin
Ioffe Physical Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
D. Zakgeim
Ioffe Physical Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Nikolaev
Ioffe Physical Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
P. Brunkov
Ioffe Physical Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Yagovkina
Ioffe Physical Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Tsatsul’nikov
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: lundin.vpegroup@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
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