The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas
- Авторы: Lundin V.V.1, Sakharov A.V.1, Zavarin E.E.1, Zakgeim D.A.1, Nikolaev A.E.1, Brunkov P.N.1, Yagovkina M.A.1, Tsatsul’nikov A.F.2
-
Учреждения:
- Ioffe Physical Technical Institute
- Submicron Heterostructures for Microelectronics Research and Engineering Center
- Выпуск: Том 44, № 7 (2018)
- Страницы: 577-580
- Раздел: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/207775
- DOI: https://doi.org/10.1134/S1063785018070106
- ID: 207775
Цитировать
Аннотация
AlGaN/AlN/GaN and InAlN/AlN/GaN structures with 2D electron gas have been grown on sapphire substrates by metal-organic vapor-phase epitaxy. The suppression of the parasitic conductivity of buffer GaN layers was provided either by intentionally raising the density of edge dislocations or by doping with iron (GaN:Fe). It was shown that using GaN buffer layers with a better crystal perfection and more planar surface results in the electron mobility in the 2D channel for carriers becoming 1.2–1.5 times higher.
Об авторах
V. Lundin
Ioffe Physical Technical Institute
Автор, ответственный за переписку.
Email: lundin.vpegroup@mail.ioffe.ru
Россия, St. Petersburg, 194021
A. Sakharov
Ioffe Physical Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Россия, St. Petersburg, 194021
E. Zavarin
Ioffe Physical Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Россия, St. Petersburg, 194021
D. Zakgeim
Ioffe Physical Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Россия, St. Petersburg, 194021
A. Nikolaev
Ioffe Physical Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Россия, St. Petersburg, 194021
P. Brunkov
Ioffe Physical Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Россия, St. Petersburg, 194021
M. Yagovkina
Ioffe Physical Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Россия, St. Petersburg, 194021
A. Tsatsul’nikov
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: lundin.vpegroup@mail.ioffe.ru
Россия, St. Petersburg, 194021
Дополнительные файлы
