The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas


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Abstract

AlGaN/AlN/GaN and InAlN/AlN/GaN structures with 2D electron gas have been grown on sapphire substrates by metal-organic vapor-phase epitaxy. The suppression of the parasitic conductivity of buffer GaN layers was provided either by intentionally raising the density of edge dislocations or by doping with iron (GaN:Fe). It was shown that using GaN buffer layers with a better crystal perfection and more planar surface results in the electron mobility in the 2D channel for carriers becoming 1.2–1.5 times higher.

About the authors

V. V. Lundin

Ioffe Physical Technical Institute

Author for correspondence.
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

A. V. Sakharov

Ioffe Physical Technical Institute

Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

E. E. Zavarin

Ioffe Physical Technical Institute

Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

D. A. Zakgeim

Ioffe Physical Technical Institute

Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

A. E. Nikolaev

Ioffe Physical Technical Institute

Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

P. N. Brunkov

Ioffe Physical Technical Institute

Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

M. A. Yagovkina

Ioffe Physical Technical Institute

Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

A. F. Tsatsul’nikov

Submicron Heterostructures for Microelectronics Research and Engineering Center

Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

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