The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas
- Authors: Lundin V.V.1, Sakharov A.V.1, Zavarin E.E.1, Zakgeim D.A.1, Nikolaev A.E.1, Brunkov P.N.1, Yagovkina M.A.1, Tsatsul’nikov A.F.2
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Affiliations:
- Ioffe Physical Technical Institute
- Submicron Heterostructures for Microelectronics Research and Engineering Center
- Issue: Vol 44, No 7 (2018)
- Pages: 577-580
- Section: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/207775
- DOI: https://doi.org/10.1134/S1063785018070106
- ID: 207775
Cite item
Abstract
AlGaN/AlN/GaN and InAlN/AlN/GaN structures with 2D electron gas have been grown on sapphire substrates by metal-organic vapor-phase epitaxy. The suppression of the parasitic conductivity of buffer GaN layers was provided either by intentionally raising the density of edge dislocations or by doping with iron (GaN:Fe). It was shown that using GaN buffer layers with a better crystal perfection and more planar surface results in the electron mobility in the 2D channel for carriers becoming 1.2–1.5 times higher.
About the authors
V. V. Lundin
Ioffe Physical Technical Institute
Author for correspondence.
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. V. Sakharov
Ioffe Physical Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. E. Zavarin
Ioffe Physical Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
D. A. Zakgeim
Ioffe Physical Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. E. Nikolaev
Ioffe Physical Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
P. N. Brunkov
Ioffe Physical Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. A. Yagovkina
Ioffe Physical Technical Institute
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. F. Tsatsul’nikov
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
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