Growth technology and characteristics of thin strontium iridate films and iridate–cuprate superconductor heterostructures
- 作者: Petrzhik A.M.1, Cristiani G.2, Logvenov G.2, Pestun A.E.3, Andreev N.V.3, Kislinskii Y.V.1, Ovsyannikov G.A.1
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隶属关系:
- Kotel’nikov Institute of Radio Engineering and Electronics
- Max Planck Institute for Solid State Research
- National University for Physics and Technology MISiS
- 期: 卷 43, 编号 6 (2017)
- 页面: 554-557
- 栏目: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/204991
- DOI: https://doi.org/10.1134/S1063785017060244
- ID: 204991
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详细
A technology for epitaxial growth of thin films of strontium iridate (Sr2IrO4) and related heterostructures with cuprate superconductor (Sr2IrO4/YBa2Cu3O7 − δ) has been proposed and developed. It is established that the two-layer structure grows epitaxially and the cuprate superconductor layer has the same critical temperature as that (~91 K) of an autonomous film. Crystallographic parameters of the obtained iridate films are close to tabulated values and the temperature dependence of their electric resistivity is consistent with published data.
作者简介
A. Petrzhik
Kotel’nikov Institute of Radio Engineering and Electronics
编辑信件的主要联系方式.
Email: petrzhik@hitech.cplire.ru
俄罗斯联邦, Moscow, 125009
G. Cristiani
Max Planck Institute for Solid State Research
Email: petrzhik@hitech.cplire.ru
德国, Stuttgart, 70589
G. Logvenov
Max Planck Institute for Solid State Research
Email: petrzhik@hitech.cplire.ru
德国, Stuttgart, 70589
A. Pestun
National University for Physics and Technology MISiS
Email: petrzhik@hitech.cplire.ru
俄罗斯联邦, Moscow, 119991
N. Andreev
National University for Physics and Technology MISiS
Email: petrzhik@hitech.cplire.ru
俄罗斯联邦, Moscow, 119991
Yu. Kislinskii
Kotel’nikov Institute of Radio Engineering and Electronics
Email: petrzhik@hitech.cplire.ru
俄罗斯联邦, Moscow, 125009
G. Ovsyannikov
Kotel’nikov Institute of Radio Engineering and Electronics
Email: petrzhik@hitech.cplire.ru
俄罗斯联邦, Moscow, 125009
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