Growth technology and characteristics of thin strontium iridate films and iridate–cuprate superconductor heterostructures


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A technology for epitaxial growth of thin films of strontium iridate (Sr2IrO4) and related heterostructures with cuprate superconductor (Sr2IrO4/YBa2Cu3O7 − δ) has been proposed and developed. It is established that the two-layer structure grows epitaxially and the cuprate superconductor layer has the same critical temperature as that (~91 K) of an autonomous film. Crystallographic parameters of the obtained iridate films are close to tabulated values and the temperature dependence of their electric resistivity is consistent with published data.

Sobre autores

A. Petrzhik

Kotel’nikov Institute of Radio Engineering and Electronics

Autor responsável pela correspondência
Email: petrzhik@hitech.cplire.ru
Rússia, Moscow, 125009

G. Cristiani

Max Planck Institute for Solid State Research

Email: petrzhik@hitech.cplire.ru
Alemanha, Stuttgart, 70589

G. Logvenov

Max Planck Institute for Solid State Research

Email: petrzhik@hitech.cplire.ru
Alemanha, Stuttgart, 70589

A. Pestun

National University for Physics and Technology MISiS

Email: petrzhik@hitech.cplire.ru
Rússia, Moscow, 119991

N. Andreev

National University for Physics and Technology MISiS

Email: petrzhik@hitech.cplire.ru
Rússia, Moscow, 119991

Yu. Kislinskii

Kotel’nikov Institute of Radio Engineering and Electronics

Email: petrzhik@hitech.cplire.ru
Rússia, Moscow, 125009

G. Ovsyannikov

Kotel’nikov Institute of Radio Engineering and Electronics

Email: petrzhik@hitech.cplire.ru
Rússia, Moscow, 125009

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