4 H -SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers

P. A. Ivanov; O. I. Kon’kov; T. P. Samsonova; A. S. Potapov

doi:10.1134/S1063785018020086

4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers

Authors: Ivanov P.A.¹, Kon’kov O.I.¹, Samsonova T.P.¹, Potapov A.S.¹
Affiliations:
1. Ioffe Physical Technical Institute
Issue: Vol 44, No 2 (2018)
Pages: 87-89
Section: Article
URL: https://bakhtiniada.ru/1063-7850/article/view/207196
DOI: https://doi.org/10.1134/S1063785018020086
ID: 207196

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Abstract

High-voltage (1600 V) diodes based on epitaxial 4H-SiC p⁺⁺–p⁺–n₀–n⁺ structures are tested as fast current breakers included in a special pulsed circuit. The measured current-breakdown time is about 150 ps. This is a record short time for high-voltage (above 1000 V) silicon-carbide diode breakers. The saturated hole-drift velocity in 4H-SiC of p type is experimentally estimated for the first time: v_sp = 3 × 10⁶ cm/s.