4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers


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Abstract

High-voltage (1600 V) diodes based on epitaxial 4H-SiC p++p+n0n+ structures are tested as fast current breakers included in a special pulsed circuit. The measured current-breakdown time is about 150 ps. This is a record short time for high-voltage (above 1000 V) silicon-carbide diode breakers. The saturated hole-drift velocity in 4H-SiC of p type is experimentally estimated for the first time: vsp = 3 × 106 cm/s.

About the authors

P. A. Ivanov

Ioffe Physical Technical Institute

Author for correspondence.
Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

O. I. Kon’kov

Ioffe Physical Technical Institute

Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

T. P. Samsonova

Ioffe Physical Technical Institute

Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

A. S. Potapov

Ioffe Physical Technical Institute

Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021

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