4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers
- Authors: Ivanov P.A.1, Kon’kov O.I.1, Samsonova T.P.1, Potapov A.S.1
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Affiliations:
- Ioffe Physical Technical Institute
- Issue: Vol 44, No 2 (2018)
- Pages: 87-89
- Section: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/207196
- DOI: https://doi.org/10.1134/S1063785018020086
- ID: 207196
Cite item
Abstract
High-voltage (1600 V) diodes based on epitaxial 4H-SiC p++–p+–n0–n+ structures are tested as fast current breakers included in a special pulsed circuit. The measured current-breakdown time is about 150 ps. This is a record short time for high-voltage (above 1000 V) silicon-carbide diode breakers. The saturated hole-drift velocity in 4H-SiC of p type is experimentally estimated for the first time: vsp = 3 × 106 cm/s.
About the authors
P. A. Ivanov
Ioffe Physical Technical Institute
Author for correspondence.
Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
O. I. Kon’kov
Ioffe Physical Technical Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
T. P. Samsonova
Ioffe Physical Technical Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. S. Potapov
Ioffe Physical Technical Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
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