Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p–n-Junction

Abstract

It has been shown that the doping of the front side of a solar cell with a deep-level p–n junction with nickel atoms increases short-circuit current density J_sc by 89% and open-circuit voltage V_oc by 19.7%. Additional thermal treatment at 700°C for 1 h increases J_sc by 98.4% and V_oc by 13.18%. It is presumed that the IR radiation conversion efficiency grows because nickel atoms form clusters, these being getter centers for uncontrolled recombinant impurities.