AlInPSbAs/InAs Heterostructures for Thermophotoelectric Converters
- Autores: Lunin L.S.1, Lunina M.L.1, Pashchenko A.S.1, Alfimova D.L.1, Danilina E.M.1
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Afiliações:
- Federal Research Center Southern Scientific Center
- Edição: Volume 44, Nº 12 (2018)
- Páginas: 1049-1051
- Seção: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208050
- DOI: https://doi.org/10.1134/S1063785018120301
- ID: 208050
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Resumo
Using the method of floating-zone recrystallization with a temperature gradient, AlInPSbAs/InAs heterostructures for thermophotoelectric converters operating in the wavelength range of 500–3200 nm are obtained. The use of the AlInPSbAs quinary solid solutions as an active region thermophotoconverters allows one to increase the external quantum yield up to 0.9 in the spectral range of 520–2800 nm.
Sobre autores
L. Lunin
Federal Research Center Southern Scientific Center
Autor responsável pela correspondência
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don
M. Lunina
Federal Research Center Southern Scientific Center
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don
A. Pashchenko
Federal Research Center Southern Scientific Center
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don
D. Alfimova
Federal Research Center Southern Scientific Center
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don
E. Danilina
Federal Research Center Southern Scientific Center
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don
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