AlInPSbAs/InAs Heterostructures for Thermophotoelectric Converters
- 作者: Lunin L.S.1, Lunina M.L.1, Pashchenko A.S.1, Alfimova D.L.1, Danilina E.M.1
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隶属关系:
- Federal Research Center Southern Scientific Center
- 期: 卷 44, 编号 12 (2018)
- 页面: 1049-1051
- 栏目: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208050
- DOI: https://doi.org/10.1134/S1063785018120301
- ID: 208050
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详细
Using the method of floating-zone recrystallization with a temperature gradient, AlInPSbAs/InAs heterostructures for thermophotoelectric converters operating in the wavelength range of 500–3200 nm are obtained. The use of the AlInPSbAs quinary solid solutions as an active region thermophotoconverters allows one to increase the external quantum yield up to 0.9 in the spectral range of 520–2800 nm.
作者简介
L. Lunin
Federal Research Center Southern Scientific Center
编辑信件的主要联系方式.
Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don
M. Lunina
Federal Research Center Southern Scientific Center
Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don
A. Pashchenko
Federal Research Center Southern Scientific Center
Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don
D. Alfimova
Federal Research Center Southern Scientific Center
Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don
E. Danilina
Federal Research Center Southern Scientific Center
Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don
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