Enviar artigo por via de e-mail Features of Switching Memristor Structures to a High-Resistance State by Sawtooth Pulses
- Autores: Filatov D.O.1, Karzanov V.V.1, Antonov I.N.1, Gorshkov O.N.1
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Afiliações:
- Lobachevsky State University of Nizhny Novgorod
- Edição: Volume 44, Nº 12 (2018)
- Páginas: 1160-1162
- Seção: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/208152
- DOI: https://doi.org/10.1134/S1063785018120416
- ID: 208152
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Resumo
It has been experimentally established that the time of switching by triangular pulses in Ti—TiN–ZrO2(Y)–Zr–Au memristor structures from the state of low resistance to the state of high resistance is inversely proportional to the voltage rise rate, i.e., the bias current through the memristor structure. A mechanism for the influence of a bias current on the switching time of the structure has been proposed.
Sobre autores
D. Filatov
Lobachevsky State University of Nizhny Novgorod
Autor responsável pela correspondência
Email: dmitry_filatov@inbox.ru
Rússia, Nizhny Novgorod, 603950
V. Karzanov
Lobachevsky State University of Nizhny Novgorod
Email: dmitry_filatov@inbox.ru
Rússia, Nizhny Novgorod, 603950
I. Antonov
Lobachevsky State University of Nizhny Novgorod
Email: dmitry_filatov@inbox.ru
Rússia, Nizhny Novgorod, 603950
O. Gorshkov
Lobachevsky State University of Nizhny Novgorod
Email: dmitry_filatov@inbox.ru
Rússia, Nizhny Novgorod, 603950
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