Features of Switching Memristor Structures to a High-Resistance State by Sawtooth Pulses

D. O. Filatov; V. V. Karzanov; I. N. Antonov; O. N. Gorshkov

doi:10.1134/S1063785018120416

Features of Switching Memristor Structures to a High-Resistance State by Sawtooth Pulses

作者: Filatov D.O.¹, Karzanov V.V.¹, Antonov I.N.¹, Gorshkov O.N.¹
隶属关系:
1. Lobachevsky State University of Nizhny Novgorod
期: 卷 44, 编号 12 (2018)
页面: 1160-1162
栏目: Article
URL: https://bakhtiniada.ru/1063-7850/article/view/208152
DOI: https://doi.org/10.1134/S1063785018120416
ID: 208152

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It has been experimentally established that the time of switching by triangular pulses in Ti—TiN–ZrO₂(Y)–Zr–Au memristor structures from the state of low resistance to the state of high resistance is inversely proportional to the voltage rise rate, i.e., the bias current through the memristor structure. A mechanism for the influence of a bias current on the switching time of the structure has been proposed.