Zinc Diffusion into InP via a Narrow Gap from a Planar Zn3P2-Based Source


Дәйексөз келтіру

Толық мәтін

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Аннотация

An original technology of zinc diffusion into InP via a narrow gap is described, which allows reproducible formation of p–n junctions with preset depth of doping and retained surface morphology of the doped layers. Using the proposed method, desired charge carrier distribution profiles in Zn-doped InP layers were obtained. It has been experimentally confirmed that the method of cross-sectional scanning electron microscopy allows to precision measure of the zinc diffusion depth.

Авторлар туралы

M. Petrushkov

A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch

Хат алмасуға жауапты Автор.
Email: maikdi@isp.nsc.ru
Ресей, Novosibirsk, 630090

M. Putyato

A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: maikdi@isp.nsc.ru
Ресей, Novosibirsk, 630090

I. Chistokhin

A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: maikdi@isp.nsc.ru
Ресей, Novosibirsk, 630090

B. Semyagin

A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: maikdi@isp.nsc.ru
Ресей, Novosibirsk, 630090

E. Emel’yanov

A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: maikdi@isp.nsc.ru
Ресей, Novosibirsk, 630090

M. Esin

A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: maikdi@isp.nsc.ru
Ресей, Novosibirsk, 630090

T. Gavrilova

A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: maikdi@isp.nsc.ru
Ресей, Novosibirsk, 630090

A. Vasev

A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: maikdi@isp.nsc.ru
Ресей, Novosibirsk, 630090

V. Preobrazhenskii

A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: maikdi@isp.nsc.ru
Ресей, Novosibirsk, 630090

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