Zinc Diffusion into InP via a Narrow Gap from a Planar Zn 3 P 2 -Based Source

M. O. Petrushkov; M. A. Putyato; I. B. Chistokhin; B. R. Semyagin; E. A. Emel’yanov; M. Yu. Esin; T. A. Gavrilova; A. V. Vasev; V. V. Preobrazhenskii

doi:10.1134/S1063785018070258

Zinc Diffusion into InP via a Narrow Gap from a Planar Zn₃P₂-Based Source

Authors: Petrushkov M.O.¹, Putyato M.A.¹, Chistokhin I.B.¹, Semyagin B.R.¹, Emel’yanov E.A.¹, Esin M.Y.¹, Gavrilova T.A.¹, Vasev A.V.¹, Preobrazhenskii V.V.¹
Affiliations:
1. A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch
Issue: Vol 44, No 7 (2018)
Pages: 612-614
Section: Article
URL: https://bakhtiniada.ru/1063-7850/article/view/207791
DOI: https://doi.org/10.1134/S1063785018070258
ID: 207791

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Supplementary files
Statistics

Abstract

An original technology of zinc diffusion into InP via a narrow gap is described, which allows reproducible formation of p–n junctions with preset depth of doping and retained surface morphology of the doped layers. Using the proposed method, desired charge carrier distribution profiles in Zn-doped InP layers were obtained. It has been experimentally confirmed that the method of cross-sectional scanning electron microscopy allows to precision measure of the zinc diffusion depth.