Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes
- Авторлар: Davydov S.Y.1,2, Lebedev A.A.1, Lebedev S.P.1, Sitnikova A.A.1, Sorokin L.M.1
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Мекемелер:
- Ioffe Physical Technical Institute
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- Шығарылым: Том 42, № 12 (2016)
- Беттер: 1153-1155
- Бөлім: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/202108
- DOI: https://doi.org/10.1134/S1063785016120051
- ID: 202108
Дәйексөз келтіру
Аннотация
The transition region of a 3C-SiC/4H-SiC heterostructure constituted by layers of the 3C and 4H polytypes has been studied. A previously proposed spinodal decomposition model was used to estimate the thickness ratio of 4H and 3C layers in comparison with the image furnished by transmission electron microscopy.
Авторлар туралы
S. Davydov
Ioffe Physical Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Хат алмасуға жауапты Автор.
Email: Sergei_Davydov@mail.ru
Ресей, St. Petersburg, 194021; St. Petersburg
A. Lebedev
Ioffe Physical Technical Institute
Email: Sergei_Davydov@mail.ru
Ресей, St. Petersburg, 194021
S. Lebedev
Ioffe Physical Technical Institute
Email: Sergei_Davydov@mail.ru
Ресей, St. Petersburg, 194021
A. Sitnikova
Ioffe Physical Technical Institute
Email: Sergei_Davydov@mail.ru
Ресей, St. Petersburg, 194021
L. Sorokin
Ioffe Physical Technical Institute
Email: Sergei_Davydov@mail.ru
Ресей, St. Petersburg, 194021
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