Отправить статью по E-mail Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes
- Авторы: Davydov S.Y.1,2, Lebedev A.A.1, Lebedev S.P.1, Sitnikova A.A.1, Sorokin L.M.1
-
Учреждения:
- Ioffe Physical Technical Institute
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- Выпуск: Том 42, № 12 (2016)
- Страницы: 1153-1155
- Раздел: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/202108
- DOI: https://doi.org/10.1134/S1063785016120051
- ID: 202108
Цитировать
Открытый доступ
Доступ предоставлен
Только для подписчиков
Аннотация
The transition region of a 3C-SiC/4H-SiC heterostructure constituted by layers of the 3C and 4H polytypes has been studied. A previously proposed spinodal decomposition model was used to estimate the thickness ratio of 4H and 3C layers in comparison with the image furnished by transmission electron microscopy.
Об авторах
S. Davydov
Ioffe Physical Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Автор, ответственный за переписку.
Email: Sergei_Davydov@mail.ru
Россия, St. Petersburg, 194021; St. Petersburg
A. Lebedev
Ioffe Physical Technical Institute
Email: Sergei_Davydov@mail.ru
Россия, St. Petersburg, 194021
S. Lebedev
Ioffe Physical Technical Institute
Email: Sergei_Davydov@mail.ru
Россия, St. Petersburg, 194021
A. Sitnikova
Ioffe Physical Technical Institute
Email: Sergei_Davydov@mail.ru
Россия, St. Petersburg, 194021
L. Sorokin
Ioffe Physical Technical Institute
Email: Sergei_Davydov@mail.ru
Россия, St. Petersburg, 194021
Дополнительные файлы
