The role of crystallographic anisotropy in formation of the structure of silicon-implanted layers of NiTi single crystals

Аннотация

The Auger electron spectroscopy and transmission electron microscopy techniques have been used to study the composition and structure of the surface layers of NiTi single crystals implanted with silicon ions at various directions of the incident ion beam. The role of “soft” [111]_B2 and “hard” [001]_B2 orientations of the NiTi single crystal in formation of the ion-beam-modified surface layer and the defect structure of Siion-implanted near-surface layers is revealed.