The role of crystallographic anisotropy in formation of the structure of silicon-implanted layers of NiTi single crystals
- Авторы: Poletika T.M.1, Meisner L.L.1,2, Girsova S.L.1, Tverdokhlebova A.V.1, Meisner S.N.1,2
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Учреждения:
- Institute of Strength Physics and Materials Science, Siberian Branch
- National Researh Tomsk State University
- Выпуск: Том 42, № 3 (2016)
- Страницы: 280-283
- Раздел: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/197884
- DOI: https://doi.org/10.1134/S1063785016030299
- ID: 197884
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Аннотация
The Auger electron spectroscopy and transmission electron microscopy techniques have been used to study the composition and structure of the surface layers of NiTi single crystals implanted with silicon ions at various directions of the incident ion beam. The role of “soft” [111]B2 and “hard” [001]B2 orientations of the NiTi single crystal in formation of the ion-beam-modified surface layer and the defect structure of Siion-implanted near-surface layers is revealed.
Об авторах
T. Poletika
Institute of Strength Physics and Materials Science, Siberian Branch
Автор, ответственный за переписку.
Email: poletm@ispms.tsc.ru
Россия, Tomsk, 634021
L. Meisner
Institute of Strength Physics and Materials Science, Siberian Branch; National Researh Tomsk State University
Email: poletm@ispms.tsc.ru
Россия, Tomsk, 634021; Tomsk, 634050
S. Girsova
Institute of Strength Physics and Materials Science, Siberian Branch
Email: poletm@ispms.tsc.ru
Россия, Tomsk, 634021
A. Tverdokhlebova
Institute of Strength Physics and Materials Science, Siberian Branch
Email: poletm@ispms.tsc.ru
Россия, Tomsk, 634021
S. Meisner
Institute of Strength Physics and Materials Science, Siberian Branch; National Researh Tomsk State University
Email: poletm@ispms.tsc.ru
Россия, Tomsk, 634021; Tomsk, 634050
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