Мақаланы E-mail арқылы жіберу InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition
- Авторлар: Levin R.V.1,2, Nevedomskii V.N.1, Pushnyi B.V.1,2, Bert N.A.1, Mizerov M.N.2
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Мекемелер:
- Ioffe Physical Technical Institute
- Submicron Heterostructures for Microelectronics, Research, and Engineering Center
- Шығарылым: Том 42, № 1 (2016)
- Беттер: 96-98
- Бөлім: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/196947
- DOI: https://doi.org/10.1134/S1063785016010284
- ID: 196947
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Аннотация
The possibility of fabricating InAs/GaSb strained-layer superlattices by metalorganic chemical vapor deposition has been experimentally demonstrated. The results of transmission electron microscopy and photoluminescence spectroscopy investigations showed that the obtained structures comprise an InAs?GaSb superlattice on a GaSb substrate consisting of 2-nm-thick InAs and 3.3-nm-thick GaSb layers.
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Авторлар туралы
R. Levin
Ioffe Physical Technical Institute; Submicron Heterostructures for Microelectronics, Research, and Engineering Center
Email: pushnyi@vpegroup.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
V. Nevedomskii
Ioffe Physical Technical Institute
Email: pushnyi@vpegroup.ioffe.ru
Ресей, St. Petersburg, 194021
B. Pushnyi
Ioffe Physical Technical Institute; Submicron Heterostructures for Microelectronics, Research, and Engineering Center
Хат алмасуға жауапты Автор.
Email: pushnyi@vpegroup.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
N. Bert
Ioffe Physical Technical Institute
Email: pushnyi@vpegroup.ioffe.ru
Ресей, St. Petersburg, 194021
M. Mizerov
Submicron Heterostructures for Microelectronics, Research, and Engineering Center
Email: pushnyi@vpegroup.ioffe.ru
Ресей, St. Petersburg, 194021
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