InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition
- Авторы: Levin R.V.1,2, Nevedomskii V.N.1, Pushnyi B.V.1,2, Bert N.A.1, Mizerov M.N.2
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Учреждения:
- Ioffe Physical Technical Institute
- Submicron Heterostructures for Microelectronics, Research, and Engineering Center
- Выпуск: Том 42, № 1 (2016)
- Страницы: 96-98
- Раздел: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/196947
- DOI: https://doi.org/10.1134/S1063785016010284
- ID: 196947
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Аннотация
The possibility of fabricating InAs/GaSb strained-layer superlattices by metalorganic chemical vapor deposition has been experimentally demonstrated. The results of transmission electron microscopy and photoluminescence spectroscopy investigations showed that the obtained structures comprise an InAs?GaSb superlattice on a GaSb substrate consisting of 2-nm-thick InAs and 3.3-nm-thick GaSb layers.
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Об авторах
R. Levin
Ioffe Physical Technical Institute; Submicron Heterostructures for Microelectronics, Research, and Engineering Center
Email: pushnyi@vpegroup.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 194021
V. Nevedomskii
Ioffe Physical Technical Institute
Email: pushnyi@vpegroup.ioffe.ru
Россия, St. Petersburg, 194021
B. Pushnyi
Ioffe Physical Technical Institute; Submicron Heterostructures for Microelectronics, Research, and Engineering Center
Автор, ответственный за переписку.
Email: pushnyi@vpegroup.ioffe.ru
Россия, St. Petersburg, 194021; St. Petersburg, 194021
N. Bert
Ioffe Physical Technical Institute
Email: pushnyi@vpegroup.ioffe.ru
Россия, St. Petersburg, 194021
M. Mizerov
Submicron Heterostructures for Microelectronics, Research, and Engineering Center
Email: pushnyi@vpegroup.ioffe.ru
Россия, St. Petersburg, 194021
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