电邮这篇文章 InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition
- 作者: Levin R.V.1,2, Nevedomskii V.N.1, Pushnyi B.V.1,2, Bert N.A.1, Mizerov M.N.2
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隶属关系:
- Ioffe Physical Technical Institute
- Submicron Heterostructures for Microelectronics, Research, and Engineering Center
- 期: 卷 42, 编号 1 (2016)
- 页面: 96-98
- 栏目: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/196947
- DOI: https://doi.org/10.1134/S1063785016010284
- ID: 196947
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详细
The possibility of fabricating InAs/GaSb strained-layer superlattices by metalorganic chemical vapor deposition has been experimentally demonstrated. The results of transmission electron microscopy and photoluminescence spectroscopy investigations showed that the obtained structures comprise an InAs?GaSb superlattice on a GaSb substrate consisting of 2-nm-thick InAs and 3.3-nm-thick GaSb layers.
作者简介
R. Levin
Ioffe Physical Technical Institute; Submicron Heterostructures for Microelectronics, Research, and Engineering Center
Email: pushnyi@vpegroup.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021
V. Nevedomskii
Ioffe Physical Technical Institute
Email: pushnyi@vpegroup.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
B. Pushnyi
Ioffe Physical Technical Institute; Submicron Heterostructures for Microelectronics, Research, and Engineering Center
编辑信件的主要联系方式.
Email: pushnyi@vpegroup.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021
N. Bert
Ioffe Physical Technical Institute
Email: pushnyi@vpegroup.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Mizerov
Submicron Heterostructures for Microelectronics, Research, and Engineering Center
Email: pushnyi@vpegroup.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
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